RQ3E080GNTB Vidiny (USD) [755728pcs Stock]
- 1 pcs$0.05411
- 3,000 pcs$0.05384
- Ampahany:
- RQ3E080GNTB
- Manufacturer:
- Rohm Semiconductor
- Famaritana antsipirihany:
- MOSFET N-CH 30V 8A 8-HSMT.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Mpihazakazaka - Iray, Transistor - FET, MOSFET - Arrays, Transistors - JFET, Diodes - Miova endrika ny habeny (varicaps, varact, Ny thyristors - DIAC, SIDACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Single, mialoha alik ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Rohm Semiconductor RQ3E080GNTB electronic components. RQ3E080GNTB can be shipped within 24 hours after order. If you have any demands for RQ3E080GNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E080GNTB Toetran'ny vokatra
Ampahany :
RQ3E080GNTB
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 30V 8A 8-HSMT
Series :
-
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
8A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
16.7 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
5.8nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
295pF @ 15V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2W (Ta), 15W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-HSMT (3.2x3)
Famonosana / tranga :
8-PowerVDFN
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