Nexperia USA Inc. - PSMN4R3-80PS,127

KEY Part #: K6404010

PSMN4R3-80PS,127 Vidiny (USD) [29974pcs Stock]

  • 1 pcs$1.37498
  • 10 pcs$1.24057
  • 100 pcs$0.94591
  • 500 pcs$0.73571
  • 1,000 pcs$0.60959

Ampahany:
PSMN4R3-80PS,127
Manufacturer:
Nexperia USA Inc.
Famaritana antsipirihany:
MOSFET N-CH 80V 120A TO220AB.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - Bipolar (BJT) - Single, Transistor - Unjunction Programmable, Transistors - IGBTs - Modules, Diodes - Mpihazakazaka - Iray, Transistors - FETs, MOSFETs - Single, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Transistors - Bipolar (BJT) - RF ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN4R3-80PS,127 Toetran'ny vokatra

Ampahany : PSMN4R3-80PS,127
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 80V 120A TO220AB
Series : -
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 120A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.3 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 111nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 8161pF @ 40V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 306W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-220AB
Famonosana / tranga : TO-220-3

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