[12525pcs Stock]
- Ampahany:
- IRFBE30
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 800V 4.1A TO-220AB.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - FET, MOSFET - RF, Transistors - IGBTs - tokan-tena, Ny kristianao - SCR, Diodes - RF, Transistors - JFET, Diodes - Rectifiers Bridge and Tratrao - SCR - Modules ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix IRFBE30 electronic components. IRFBE30 can be shipped within 24 hours after order. If you have any demands for IRFBE30, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBE30 Toetran'ny vokatra
Ampahany :
IRFBE30
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 800V 4.1A TO-220AB
Series :
-
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
4.1A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1300pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
125W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-220AB
Famonosana / tranga :
TO-220-3
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