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Raha tsy voatanisa ny toerana misy anao dia safidio ny iray amin'ireto manaraka ireto:

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  5. JAN1N5802US

Microsemi Corporation - JAN1N5802US

KEY Part #: K6426959

JAN1N5802US Vidiny (USD) [7195pcs Stock]

  • 1 pcs$5.72756
  • 100 pcs$5.14244
Ampahany:
JAN1N5802US
Manufacturer:
Microsemi Corporation
Famaritana antsipirihany:
DIODE GEN PURP 50V 2.5A D5A. ESD Suppressors / TVS Diodes DIODE 1A 50V TRR 25NS
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Iray, Transistors - Bipolar (BJT) - RF, Transistorio - Bipolar (BJT) - Arrays, Transistor - Unjunction Programmable and Diode - Mpitaovana - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Microsemi Corporation JAN1N5802US electronic components. JAN1N5802US can be shipped within 24 hours after order. If you have any demands for JAN1N5802US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5802US Toetran'ny vokatra

Ampahany : JAN1N5802US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 50V 2.5A D5A
Series : Military, MIL-PRF-19500/477
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 50V
Ankehitriny - salanisa antonony (Io) : 2.5A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 975mV @ 2.5A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 25ns
Ankehitriny - Reverse Leakage @ Vr : 1µA @ 50V
Capacitance @ Vr, F : 25pF @ 10V, 1MHz
Type Type : Surface Mount
Famonosana / tranga : SQ-MELF, A
Package Fitaovana mpamatsy : D-5A
Ny mari-pana tsy miasa - Junction : -65°C ~ 175°C

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