IPAN60R650CEXKSA1 Vidiny (USD) [134353pcs Stock]
- 1 pcs$0.45155
- 10 pcs$0.39929
- 100 pcs$0.29844
- 500 pcs$0.23145
- 1,000 pcs$0.18272
- Ampahany:
- IPAN60R650CEXKSA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET NCH 600V 9.9A TO220.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diode - Mpitaovana - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact, Ny kristianao - SCR, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - RF and Diode - Zener - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPAN60R650CEXKSA1 electronic components. IPAN60R650CEXKSA1 can be shipped within 24 hours after order. If you have any demands for IPAN60R650CEXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPAN60R650CEXKSA1 Toetran'ny vokatra
Ampahany :
IPAN60R650CEXKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET NCH 600V 9.9A TO220
Series :
CoolMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
9.9A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
20.5nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
440pF @ 100V
Fihetsika FET :
Super Junction
Fandroahana herinaratra (Max) :
28W (Tc)
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
PG-TO220 Full Pack
Famonosana / tranga :
TO-220-3 Full Pack
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