Ampahany :
IPB180N04S4L01ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH TO263-7
Series :
Automotive, AEC-Q101, OptiMOS™
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
180A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.2 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs :
245nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
19100pF @ 25V
Fandroahana herinaratra (Max) :
188W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO263-7-3
Famonosana / tranga :
TO-263-7, D²Pak (6 Leads + Tab)