Ampahany :
SIS888DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 150V 20.2A 1212-8S
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20.2A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
58 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14.5nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
420pF @ 75V
Fandroahana herinaratra (Max) :
52W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TA)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® 1212-8S (3.3x3.3)
Famonosana / tranga :
PowerPAK® 1212-8S