US1J-E3/61T Vidiny (USD) [766693pcs Stock]
- 1 pcs$0.04824
- 1,800 pcs$0.04128
- 3,600 pcs$0.03715
- 5,400 pcs$0.03508
- 12,600 pcs$0.03199
- 45,000 pcs$0.02993
- Ampahany:
- US1J-E3/61T
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Famaritana antsipirihany:
- DIODE GEN PURP 600V 1A DO214AC. Rectifiers 1.0 Amp 600 Volt
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - RF, Transistors - JFET, Tratrao - SCR - Modules, Tratrao - TRIACs, Transistor - FET, MOSFET - Arrays and Transistors - Bipolar (BJT) - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Semiconductor Diodes Division US1J-E3/61T electronic components. US1J-E3/61T can be shipped within 24 hours after order. If you have any demands for US1J-E3/61T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
US1J-E3/61T Toetran'ny vokatra
Ampahany :
US1J-E3/61T
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 600V 1A DO214AC
Series :
-
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
600V
Ankehitriny - salanisa antonony (Io) :
1A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
1.7V @ 1A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
75ns
Ankehitriny - Reverse Leakage @ Vr :
10µA @ 600V
Capacitance @ Vr, F :
10pF @ 4V, 1MHz
Type Type :
Surface Mount
Famonosana / tranga :
DO-214AC, SMA
Package Fitaovana mpamatsy :
DO-214AC (SMA)
Ny mari-pana tsy miasa - Junction :
-55°C ~ 150°C
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