Vishay Siliconix - SI3457BDV-T1-GE3

KEY Part #: K6406159

[1415pcs Stock]


    Ampahany:
    SI3457BDV-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Famaritana antsipirihany:
    MOSFET P-CH 30V 3.7A 6-TSOP.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Tratrao - TRIACs, Diodes - Zener - Iray, Transistors - Bipolar (BJT) - Single, Ny kristianao - SCR, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - IGBTs - Tafidina, Ny thyristors - DIAC, SIDACs and Diodes - Mpihazakazaka - Iray ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Vishay Siliconix SI3457BDV-T1-GE3 electronic components. SI3457BDV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3457BDV-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI3457BDV-T1-GE3 Toetran'ny vokatra

    Ampahany : SI3457BDV-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET P-CH 30V 3.7A 6-TSOP
    Series : TrenchFET®
    Ampahany : Obsolete
    Type FET : P-Channel
    teknolojia : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 3.7A (Ta)
    Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 54 mOhm @ 5A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
    Vgs (Max) : ±20V
    Fampiasana masinina (Ciss) (Max) @ Vds : -
    Fihetsika FET : -
    Fandroahana herinaratra (Max) : 1.14W (Ta)
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Package Fitaovana mpamatsy : 6-TSOP
    Famonosana / tranga : SOT-23-6 Thin, TSOT-23-6