[1273pcs Stock]
- Ampahany:
- IRF8113GTRPBF
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 30V 17.2A 8-SOIC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Tratrao - SCR - Modules, Transistor - Unjunction Programmable, Transistors - IGBTs - Modules, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - tokan-tena, Transistors - JFET and Transistors - Bipolar (BJT) - Single, mialoha alik ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IRF8113GTRPBF electronic components. IRF8113GTRPBF can be shipped within 24 hours after order. If you have any demands for IRF8113GTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8113GTRPBF Toetran'ny vokatra
Ampahany :
IRF8113GTRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 17.2A 8-SOIC
Series :
HEXFET®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
17.2A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.6 mOhm @ 17.2A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 4.5V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2910pF @ 15V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.5W (Ta)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-SO
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
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