Vishay Siliconix - SI5509DC-T1-E3

KEY Part #: K6524413

[3839pcs Stock]


    Ampahany:
    SI5509DC-T1-E3
    Manufacturer:
    Vishay Siliconix
    Famaritana antsipirihany:
    MOSFET N/P-CH 20V 6.1A 1206-8.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Ny thyristors - DIAC, SIDACs, Modules maotera mpamily, Transistors - IGBTs - tokan-tena, Transistor - FET, MOSFET - Arrays, Transistors - IGBTs - Tafidina, Diode - Zener - Arrays and Diodes - RF ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Vishay Siliconix SI5509DC-T1-E3 electronic components. SI5509DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5509DC-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI5509DC-T1-E3 Toetran'ny vokatra

    Ampahany : SI5509DC-T1-E3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N/P-CH 20V 6.1A 1206-8
    Series : TrenchFET®
    Ampahany : Obsolete
    Type FET : N and P-Channel
    Fihetsika FET : Logic Level Gate
    Drain to Source Voltage (Vdss) : 20V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 6.1A, 4.8A
    Rds On (Max) @ Id, Vgs : 52 mOhm @ 5A, 4.5V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 6.6nC @ 5V
    Fampiasana masinina (Ciss) (Max) @ Vds : 455pF @ 10V
    Hery - Max : 4.5W
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Famonosana / tranga : 8-SMD, Flat Lead
    Package Fitaovana mpamatsy : 1206-8 ChipFET™