SIS435DNT-T1-GE3 Vidiny (USD) [275873pcs Stock]
- 1 pcs$0.13407
- 3,000 pcs$0.12616
- Ampahany:
- SIS435DNT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET P-CH 20V 30A 1212-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Transistor - Unjunction Programmable, Transistors - IGBTs - tokan-tena, Diodes - Zener - Iray, Transistors - JFET, Diodes - Miova endrika ny habeny (varicaps, varact, Tratrao - SCR - Modules and Transistors - Bipolar (BJT) - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIS435DNT-T1-GE3 electronic components. SIS435DNT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS435DNT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS435DNT-T1-GE3 Toetran'ny vokatra
Ampahany :
SIS435DNT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 20V 30A 1212-8
Series :
TrenchFET®
Ampahany :
Active
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
30A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
5.4 mOhm @ 13A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 8V
Vgs (Max) :
±8V
Fampiasana masinina (Ciss) (Max) @ Vds :
5700pF @ 10V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3.7W (Ta), 39W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® 1212-8
Famonosana / tranga :
PowerPAK® 1212-8
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