Manufacturer :
GeneSiC Semiconductor
Description :
TRANS SJT 600V 100A
teknolojia :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
100A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
25 mOhm @ 50A
Gate Charge (Qg) (Max) @ Vgs :
-
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Fandroahana herinaratra (Max) :
769W (Tc)
Ny mari-pana :
-55°C ~ 225°C (TJ)
Package Fitaovana mpamatsy :
TO-258
Famonosana / tranga :
TO-258-3, TO-258AA