Infineon Technologies - IPP075N15N3GXKSA1

KEY Part #: K6401607

IPP075N15N3GXKSA1 Vidiny (USD) [13916pcs Stock]

  • 1 pcs$2.56047
  • 10 pcs$2.28591
  • 100 pcs$1.87456
  • 500 pcs$1.51794
  • 1,000 pcs$1.28019

Ampahany:
IPP075N15N3GXKSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 150V 100A TO220-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Diodes - Rectifiers Bridge, Diode - Mpitaovana - Arrays, Transistors - JFET, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Tafidina, Transistor - Unjunction Programmable and Transistors - Bipolar (BJT) - Single, mialoha alik ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP075N15N3GXKSA1 Toetran'ny vokatra

Ampahany : IPP075N15N3GXKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 150V 100A TO220-3
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 100A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 8V, 10V
Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs : 93nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 5470pF @ 75V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 300W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO220-3
Famonosana / tranga : TO-220-3