ON Semiconductor - NTLJD3115PT1G

KEY Part #: K6521883

NTLJD3115PT1G Vidiny (USD) [432588pcs Stock]

  • 1 pcs$0.08550
  • 3,000 pcs$0.08146

Ampahany:
NTLJD3115PT1G
Manufacturer:
ON Semiconductor
Famaritana antsipirihany:
MOSFET 2P-CH 20V 2.3A 6-WDFN.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - IGBTs - tokan-tena, Transistors - IGBTs - Tafidina, Diode - Mpitaovana - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Ny kristianao - SCR, Tratrao - TRIACs and Diodes - Rectifiers Bridge ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTLJD3115PT1G Toetran'ny vokatra

Ampahany : NTLJD3115PT1G
Manufacturer : ON Semiconductor
Description : MOSFET 2P-CH 20V 2.3A 6-WDFN
Series : -
Ampahany : Active
Type FET : 2 P-Channel (Dual)
Fihetsika FET : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds : 531pF @ 10V
Hery - Max : 710mW
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : 6-WDFN Exposed Pad
Package Fitaovana mpamatsy : 6-WDFN (2x2)