Infineon Technologies - IPP80N06S2L11AKSA2

KEY Part #: K6419119

IPP80N06S2L11AKSA2 Vidiny (USD) [92356pcs Stock]

  • 1 pcs$0.42337
  • 500 pcs$0.31741

Ampahany:
IPP80N06S2L11AKSA2
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 55V 80A TO220-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Ny kristianao - SCR, Transistors - JFET, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - IGBTs - Modules, Transistorio - Bipolar (BJT) - Arrays, Diodes - Mpihazakazaka - Iray and Transistor - Tanjona manokana ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP80N06S2L11AKSA2 Toetran'ny vokatra

Ampahany : IPP80N06S2L11AKSA2
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 55V 80A TO220-3
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 10.7 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id : 2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 2075pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 158W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO220-3-1
Famonosana / tranga : TO-220-3