ON Semiconductor - FDN5618P_G

KEY Part #: K6401154

[3149pcs Stock]


    Ampahany:
    FDN5618P_G
    Manufacturer:
    ON Semiconductor
    Famaritana antsipirihany:
    INTEGRATED CIRCUIT.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Diodes - Miova endrika ny habeny (varicaps, varact, Transistor - FET, MOSFET - Arrays, Transistors - FET, MOSFET - RF, Diodes - Mpihazakazaka - Iray, Tratrao - TRIACs, Diodes - RF and Transistorio - Bipolar (BJT) - Arrays ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in ON Semiconductor FDN5618P_G electronic components. FDN5618P_G can be shipped within 24 hours after order. If you have any demands for FDN5618P_G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDN5618P_G Toetran'ny vokatra

    Ampahany : FDN5618P_G
    Manufacturer : ON Semiconductor
    Description : INTEGRATED CIRCUIT
    Series : PowerTrench®
    Ampahany : Obsolete
    Type FET : P-Channel
    teknolojia : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 1.25A (Ta)
    Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 170 mOhm @ 1.25A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 13.8nC @ 10V
    Vgs (Max) : ±20V
    Fampiasana masinina (Ciss) (Max) @ Vds : 430pF @ 30V
    Fihetsika FET : -
    Fandroahana herinaratra (Max) : 500mW (Ta)
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Package Fitaovana mpamatsy : SuperSOT-3
    Famonosana / tranga : TO-236-3, SC-59, SOT-23-3

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