Vishay Semiconductor Diodes Division - VS-GB100TP120N

KEY Part #: K6533280

VS-GB100TP120N Vidiny (USD) [881pcs Stock]

  • 1 pcs$52.66446
  • 24 pcs$40.67562

Ampahany:
VS-GB100TP120N
Manufacturer:
Vishay Semiconductor Diodes Division
Famaritana antsipirihany:
IGBT 1200V 200A 650W INT-A-PAK.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - Single, Diode - Zener - Arrays, Transistor - Tanjona manokana, Ny kristianao - SCR, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Transistors - FETs, MOSFETs - Single ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Semiconductor Diodes Division VS-GB100TP120N electronic components. VS-GB100TP120N can be shipped within 24 hours after order. If you have any demands for VS-GB100TP120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB100TP120N Toetran'ny vokatra

Ampahany : VS-GB100TP120N
Manufacturer : Vishay Semiconductor Diodes Division
Description : IGBT 1200V 200A 650W INT-A-PAK
Series : -
Ampahany : Active
IGBT Type : -
Configuration : Half Bridge
Volonta - Famoronan'ny mpanangom-bokatra : 1200V
Ankehitriny - Collector (Ic) (Max) : 200A
Hery - Max : 650W
Vce (eo) (Max) @ Vge, Ic : 2.2V @ 15V, 100A
Ankehitriny - Collector Cutoff (Max) : 5mA
Fampitahana Input (Cies) @ Vce : 7.43nF @ 25V
fahan'ny : Standard
NTC Thermistor : No
Ny mari-pana : 150°C (TJ)
Type Type : Chassis Mount
Famonosana / tranga : INT-A-Pak
Package Fitaovana mpamatsy : INT-A-PAK

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