[7413pcs Stock]
- Ampahany:
- JAN1N6622US
- Manufacturer:
- Microsemi Corporation
- Famaritana antsipirihany:
- DIODE GEN PURP 660V 2A D5A. Rectifiers Rectifier
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Diodes - RF, Transistor - Tanjona manokana, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - tokan-tena, Transistors - Bipolar (BJT) - Single, Diode - Mpitaovana - Arrays and Ny kristianao - SCR ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Microsemi Corporation JAN1N6622US electronic components. JAN1N6622US can be shipped within 24 hours after order. If you have any demands for JAN1N6622US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JAN1N6622US Toetran'ny vokatra
Ampahany :
JAN1N6622US
Manufacturer :
Microsemi Corporation
Description :
DIODE GEN PURP 660V 2A D5A
Series :
Military, MIL-PRF-19500/585
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
660V
Ankehitriny - salanisa antonony (Io) :
1.2A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
1.4V @ 1.2A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
30ns
Ankehitriny - Reverse Leakage @ Vr :
500nA @ 660V
Capacitance @ Vr, F :
10pF @ 10V, 1MHz
Type Type :
Surface Mount
Famonosana / tranga :
SQ-MELF, A
Package Fitaovana mpamatsy :
D-5A
Ny mari-pana tsy miasa - Junction :
-65°C ~ 150°C
Vaovao farany
Mety ho liana koa ianao
-
RJU6052SDPD-E0#J2
Renesas Electronics America
DIODE GEN PURP 600V 20A TO252. Diodes - General Purpose, Power, Switching FRD 600V/10A/25ns Trr/TO-252
-
RJU4352SDPD-E0#J2
Renesas Electronics America
DIODE GEN PURP 430V 20A TO252. Diodes - General Purpose, Power, Switching FRD 430V/20A/23ns Trr/TO-252
-
RJU3052SDPD-E0#J2
Renesas Electronics America
DIODE GEN PURP 360V 20A TO252. Diodes - General Purpose, Power, Switching FRD 360V/20A/40ns Trr/TO-252
-
UD0506T-TL-H
ON Semiconductor
DIODE GEN PURP 600V 5A TPFA. Diodes - General Purpose, Power, Switching FRD 5A 600V LOW VF
-
-
Faritra mafana
- BAT46WJ/DG/B2,115
- D121K20BXPSA1
- SB530-A
- 1N4002-N-0-2-BP
- VS-20TQ035STRLPBF
- RY2A
- VS-HFA16TB120STRRP
- GKR26/14
- DSK10C
- 1N3901
- AS3PGHM3/86A
- BYS459-1500-E3/45
- US1BHE3/61T
- ESH3BHE3/57T
- GP10M-4007E-M3/73
- BYM07-50HE3/98
- MBRB10H60HE3/81
- GI810-E3/54
- FGP10B-E3/54
- BYS10-25HE3/TR3
- EGP50DHE3/73
- CDBA120-G
- FFPF04F150STU
- VS-8TQ080PBF
- SD101CWS-7
- B0540W-7
- 6A8
- 301U80
- B140S1F-7
- CCS15S30,L3QUF
- STPSC40065CWY
- HER104-TP
- 2A06-AP
- UGB8BTHE3/81
- S10CKHM3/I
- ES2FHE3_A/I
- MURS240-E3/5BT
- 1N6484HE3/96
- GP10-4005E-E3/73
- RS3B M6G