Microsemi Corporation - JAN1N6622US

KEY Part #: K6442405

[7413pcs Stock]


    Ampahany:
    JAN1N6622US
    Manufacturer:
    Microsemi Corporation
    Famaritana antsipirihany:
    DIODE GEN PURP 660V 2A D5A. Rectifiers Rectifier
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diode - Zener - Arrays, Tratrao - TRIACs, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Transistors - IGBTs - Modules ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Microsemi Corporation JAN1N6622US electronic components. JAN1N6622US can be shipped within 24 hours after order. If you have any demands for JAN1N6622US, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    JAN1N6622US Toetran'ny vokatra

    Ampahany : JAN1N6622US
    Manufacturer : Microsemi Corporation
    Description : DIODE GEN PURP 660V 2A D5A
    Series : Military, MIL-PRF-19500/585
    Ampahany : Active
    Type diode : Standard
    Torohevitra - Reverse DC (Vr) (Max) : 660V
    Ankehitriny - salanisa antonony (Io) : 1.2A
    Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.4V @ 1.2A
    Speed : Fast Recovery =< 500ns, > 200mA (Io)
    Fotoana Famerenana amin'ny laoniny (trr) : 30ns
    Ankehitriny - Reverse Leakage @ Vr : 500nA @ 660V
    Capacitance @ Vr, F : 10pF @ 10V, 1MHz
    Type Type : Surface Mount
    Famonosana / tranga : SQ-MELF, A
    Package Fitaovana mpamatsy : D-5A
    Ny mari-pana tsy miasa - Junction : -65°C ~ 150°C

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