WeEn Semiconductors - BYV30JT-600PQ

KEY Part #: K6440506

[3795pcs Stock]


    Ampahany:
    BYV30JT-600PQ
    Manufacturer:
    WeEn Semiconductors
    Famaritana antsipirihany:
    DIODE GEN PURP 600V 30A TO-3P. Rectifiers BYV30JT-600PQ/TO3PF/STANDARD M
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Tanjona manokana, Ny thyristors - DIAC, SIDACs, Transistor - FET, MOSFET - Arrays, Transistor - Unjunction Programmable, Diode - Zener - Arrays, Tratrao - TRIACs, Transistors - FETs, MOSFETs - Single and Diode - Mpitaovana - Arrays ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in WeEn Semiconductors BYV30JT-600PQ electronic components. BYV30JT-600PQ can be shipped within 24 hours after order. If you have any demands for BYV30JT-600PQ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BYV30JT-600PQ Toetran'ny vokatra

    Ampahany : BYV30JT-600PQ
    Manufacturer : WeEn Semiconductors
    Description : DIODE GEN PURP 600V 30A TO-3P
    Series : -
    Ampahany : Active
    Type diode : Standard
    Torohevitra - Reverse DC (Vr) (Max) : 600V
    Ankehitriny - salanisa antonony (Io) : 30A
    Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.8V @ 30A
    Speed : Fast Recovery =< 500ns, > 200mA (Io)
    Fotoana Famerenana amin'ny laoniny (trr) : 65ns
    Ankehitriny - Reverse Leakage @ Vr : 10µA @ 600V
    Capacitance @ Vr, F : -
    Type Type : Through Hole
    Famonosana / tranga : TO-3P-3, SC-65-3
    Package Fitaovana mpamatsy : TO-3P
    Ny mari-pana tsy miasa - Junction : 175°C (Max)
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