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Raha tsy voatanisa ny toerana misy anao dia safidio ny iray amin'ireto manaraka ireto:

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Microsemi Corporation - JAN1N5809US

KEY Part #: K6428074

JAN1N5809US Vidiny (USD) [8882pcs Stock]

  • 1 pcs$4.66293
  • 100 pcs$4.63973
Ampahany:
JAN1N5809US
Manufacturer:
Microsemi Corporation
Famaritana antsipirihany:
DIODE GEN PURP 100V 6A B-MELF. Rectifiers MIL, QPL PART, 3A 100V ULTRAFAST RECT- SQ END CAPS
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - JFET, Ny kristianao - SCR, Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - IGBTs - Tafidina, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Transistors - FETs, MOSFETs - Single ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Microsemi Corporation JAN1N5809US electronic components. JAN1N5809US can be shipped within 24 hours after order. If you have any demands for JAN1N5809US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5809US Toetran'ny vokatra

Ampahany : JAN1N5809US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 100V 6A B-MELF
Series : Military, MIL-PRF-19500/477
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 100V
Ankehitriny - salanisa antonony (Io) : 6A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 875mV @ 4A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 30ns
Ankehitriny - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 60pF @ 10V, 1MHz
Type Type : Surface Mount
Famonosana / tranga : SQ-MELF, B
Package Fitaovana mpamatsy : B, SQ-MELF
Ny mari-pana tsy miasa - Junction : -65°C ~ 175°C

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