Microsemi Corporation - JAN1N5550US

KEY Part #: K6442422

[3139pcs Stock]


    Ampahany:
    JAN1N5550US
    Manufacturer:
    Microsemi Corporation
    Famaritana antsipirihany:
    DIODE GEN PURP 200V 3A B-MELF.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Mpihazakazaka - Iray, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - Bipolar (BJT) - Single, Transistor - Unjunction Programmable, Modules maotera mpamily, Transistors - FET, MOSFET - RF, Tratrao - SCR - Modules and Transistors - JFET ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Microsemi Corporation JAN1N5550US electronic components. JAN1N5550US can be shipped within 24 hours after order. If you have any demands for JAN1N5550US, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    JAN1N5550US Toetran'ny vokatra

    Ampahany : JAN1N5550US
    Manufacturer : Microsemi Corporation
    Description : DIODE GEN PURP 200V 3A B-MELF
    Series : Military, MIL-PRF-19500/420
    Ampahany : Discontinued at Digi-Key
    Type diode : Standard
    Torohevitra - Reverse DC (Vr) (Max) : 200V
    Ankehitriny - salanisa antonony (Io) : 3A
    Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.2V @ 9A
    Speed : Standard Recovery >500ns, > 200mA (Io)
    Fotoana Famerenana amin'ny laoniny (trr) : 2µs
    Ankehitriny - Reverse Leakage @ Vr : 1µA @ 200V
    Capacitance @ Vr, F : -
    Type Type : Surface Mount
    Famonosana / tranga : SQ-MELF, B
    Package Fitaovana mpamatsy : D-5B
    Ny mari-pana tsy miasa - Junction : -65°C ~ 175°C

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