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Raha tsy voatanisa ny toerana misy anao dia safidio ny iray amin'ireto manaraka ireto:

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  5. JAN1N5622US

Microsemi Corporation - JAN1N5622US

KEY Part #: K6427399

JAN1N5622US Vidiny (USD) [7764pcs Stock]

  • 1 pcs$5.33380
  • 100 pcs$5.30726
Ampahany:
JAN1N5622US
Manufacturer:
Microsemi Corporation
Famaritana antsipirihany:
DIODE GEN PURP 1KV 1A D5A. Rectifiers Rectifier
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - FET, MOSFET - RF, Diode - Zener - Arrays, Tratrao - SCR - Modules, Transistors - Bipolar (BJT) - Single, Transistors - JFET, Transistor - FET, MOSFET - Arrays and Ny thyristors - DIAC, SIDACs ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Microsemi Corporation JAN1N5622US electronic components. JAN1N5622US can be shipped within 24 hours after order. If you have any demands for JAN1N5622US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5622US Toetran'ny vokatra

Ampahany : JAN1N5622US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 1KV 1A D5A
Series : Military, MIL-PRF-19500/427
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 1000V
Ankehitriny - salanisa antonony (Io) : 1A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.3V @ 3A
Speed : Standard Recovery >500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 2µs
Ankehitriny - Reverse Leakage @ Vr : 500nA @ 1000V
Capacitance @ Vr, F : -
Type Type : Surface Mount
Famonosana / tranga : SQ-MELF, A
Package Fitaovana mpamatsy : D-5A
Ny mari-pana tsy miasa - Junction : -65°C ~ 200°C

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