Vishay Siliconix - SIR412DP-T1-GE3

KEY Part #: K6414629

SIR412DP-T1-GE3 Vidiny (USD) [12689pcs Stock]

  • 3,000 pcs$0.13247

Ampahany:
SIR412DP-T1-GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N-CH 25V 20A PPAK SO-8.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
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We specialize in Vishay Siliconix SIR412DP-T1-GE3 electronic components. SIR412DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIR412DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIR412DP-T1-GE3 Toetran'ny vokatra

Ampahany : SIR412DP-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 25V 20A PPAK SO-8
Series : TrenchFET®
Ampahany : Obsolete
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 25V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 20A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 600pF @ 10V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 3.9W (Ta), 15.6W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PowerPAK® SO-8
Famonosana / tranga : PowerPAK® SO-8

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