BSZ110N06NS3GATMA1 Vidiny (USD) [296365pcs Stock]
- 1 pcs$0.12480
- Ampahany:
- BSZ110N06NS3GATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 60V 20A TSDSON-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Iray, Transistors - JFET, Transistor - Tanjona manokana, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Tratrao - SCR - Modules and Diodes - Mpihazakazaka - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies BSZ110N06NS3GATMA1 electronic components. BSZ110N06NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ110N06NS3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ110N06NS3GATMA1 Toetran'ny vokatra
Ampahany :
BSZ110N06NS3GATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 60V 20A TSDSON-8
Series :
OptiMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
11 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2700pF @ 30V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.1W (Ta), 50W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TSDSON-8
Famonosana / tranga :
8-PowerVDFN
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