6A80GHB0G Vidiny (USD) [635119pcs Stock]
- 1 pcs$0.05824
- Ampahany:
- 6A80GHB0G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Famaritana antsipirihany:
- DIODE GEN PURP 800V 6A R-6.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - IGBTs - Modules, Tratrao - SCR - Modules, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF and Transistors - JFET ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Taiwan Semiconductor Corporation 6A80GHB0G electronic components. 6A80GHB0G can be shipped within 24 hours after order. If you have any demands for 6A80GHB0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
6A80GHB0G Toetran'ny vokatra
Ampahany :
6A80GHB0G
Manufacturer :
Taiwan Semiconductor Corporation
Description :
DIODE GEN PURP 800V 6A R-6
Series :
Automotive, AEC-Q101
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
800V
Ankehitriny - salanisa antonony (Io) :
6A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
1V @ 6A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
-
Ankehitriny - Reverse Leakage @ Vr :
10µA @ 800V
Capacitance @ Vr, F :
60pF @ 4V, 1MHz
Type Type :
Through Hole
Famonosana / tranga :
R6, Axial
Package Fitaovana mpamatsy :
R-6
Ny mari-pana tsy miasa - Junction :
-55°C ~ 150°C
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