FCP190N65S3R0 Vidiny (USD) [65548pcs Stock]
- 1 pcs$0.59652
- Ampahany:
- FCP190N65S3R0
- Manufacturer:
- ON Semiconductor
- Famaritana antsipirihany:
- MOSFET N-CH 650V 190MOHM TO220 I.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Tratrao - SCR - Modules, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - FET, MOSFET - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - tokan-tena, Transistor - Tanjona manokana and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in ON Semiconductor FCP190N65S3R0 electronic components. FCP190N65S3R0 can be shipped within 24 hours after order. If you have any demands for FCP190N65S3R0, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP190N65S3R0 Toetran'ny vokatra
Ampahany :
FCP190N65S3R0
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 650V 190MOHM TO220 I
Series :
SuperFET® III
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
17A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
1350pF @ 400V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
144W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-220-3
Famonosana / tranga :
TO-220-3
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