RS1E200BNTB Vidiny (USD) [494560pcs Stock]
- 1 pcs$0.08268
- 2,500 pcs$0.08227
- Ampahany:
- RS1E200BNTB
- Manufacturer:
- Rohm Semiconductor
- Famaritana antsipirihany:
- MOSFET N-CH 30V 20A 8HSOP.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistors - IGBTs - Modules, Transistor - Unjunction Programmable, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Iray, Diodes - Rectifiers Bridge, Transistors - JFET and Transistors - FET, MOSFET - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Rohm Semiconductor RS1E200BNTB electronic components. RS1E200BNTB can be shipped within 24 hours after order. If you have any demands for RS1E200BNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1E200BNTB Toetran'ny vokatra
Ampahany :
RS1E200BNTB
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 30V 20A 8HSOP
Series :
-
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.9 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
3100pF @ 15V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3W (Ta), 25W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-HSOP
Famonosana / tranga :
8-PowerTDFN
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