Vishay Siliconix - SIA519EDJ-T1-GE3

KEY Part #: K6525369

SIA519EDJ-T1-GE3 Vidiny (USD) [383787pcs Stock]

  • 1 pcs$0.09638
  • 3,000 pcs$0.09104

Ampahany:
SIA519EDJ-T1-GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N/P-CH 20V 4.5A SC70-6.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - FETs, MOSFETs - Single, Diode - Zener - Arrays, Modules maotera mpamily, Ny kristianao - SCR, Tratrao - TRIACs, Diode - Mpitaovana - Arrays and Transistor - FET, MOSFET - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SIA519EDJ-T1-GE3 electronic components. SIA519EDJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA519EDJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIA519EDJ-T1-GE3 Toetran'ny vokatra

Ampahany : SIA519EDJ-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N/P-CH 20V 4.5A SC70-6
Series : TrenchFET®
Ampahany : Active
Type FET : N and P-Channel
Fihetsika FET : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 4.5A
Rds On (Max) @ Id, Vgs : 40 mOhm @ 4.2A, 4.5V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds : 350pF @ 10V
Hery - Max : 7.8W
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : PowerPAK® SC-70-6 Dual
Package Fitaovana mpamatsy : PowerPAK® SC-70-6 Dual