SQ1912EH-T1_GE3 Vidiny (USD) [610452pcs Stock]
- 1 pcs$0.06059
- 3,000 pcs$0.05168
- Ampahany:
- SQ1912EH-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2 N-CH 20V 800MA SC70-6.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Tratrao - SCR - Modules, Transistors - JFET, Transistors - IGBTs - tokan-tena, Ny kristianao - SCR, Diodes - Zener - Iray, Tratrao - TRIACs and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SQ1912EH-T1_GE3 electronic components. SQ1912EH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1912EH-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ1912EH-T1_GE3 Toetran'ny vokatra
Ampahany :
SQ1912EH-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2 N-CH 20V 800MA SC70-6
Series :
Automotive, AEC-Q101, TrenchFET®
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
800mA (Tc)
Rds On (Max) @ Id, Vgs :
280 mOhm @ 1.2A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.15nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
75pF @ 10V
Hery - Max :
1.5W
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
6-TSSOP, SC-88, SOT-363
Package Fitaovana mpamatsy :
SC-70-6
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