RF4E080BNTR Vidiny (USD) [396411pcs Stock]
- 1 pcs$0.10315
- 3,000 pcs$0.10264
- Ampahany:
- RF4E080BNTR
- Manufacturer:
- Rohm Semiconductor
- Famaritana antsipirihany:
- MOSFET N-CH 30V 8A 8-HUML.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Tafidina, Diodes - Rectifiers Bridge, Transistor - Unjunction Programmable, Transistors - IGBTs - Modules, Transistor - Tanjona manokana and Ny thyristors - DIAC, SIDACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Rohm Semiconductor RF4E080BNTR electronic components. RF4E080BNTR can be shipped within 24 hours after order. If you have any demands for RF4E080BNTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RF4E080BNTR Toetran'ny vokatra
Ampahany :
RF4E080BNTR
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 30V 8A 8-HUML
Series :
-
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
8A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
17.6 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
660pF @ 15V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2W (Ta)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
HUML2020L8
Famonosana / tranga :
8-PowerUDFN
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