[2597pcs Stock]
- Ampahany:
- IPD80R2K8CEBTMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 800V 1.9A TO252-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FETs, MOSFETs - Single, Tratrao - TRIACs, Diodes - Miova endrika ny habeny (varicaps, varact, Modules maotera mpamily, Ny thyristors - DIAC, SIDACs, Transistors - JFET, Transistor - Tanjona manokana and Diodes - Rectifiers Bridge ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPD80R2K8CEBTMA1 electronic components. IPD80R2K8CEBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R2K8CEBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD80R2K8CEBTMA1 Toetran'ny vokatra
Ampahany :
IPD80R2K8CEBTMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 800V 1.9A TO252-3
Series :
CoolMOS™
Ampahany :
Discontinued at Digi-Key
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.9A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.8 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
290pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
42W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-252-3
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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