[174pcs Stock]
- Ampahany:
- SPB10N10 G
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 100V 10.3A D2PAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - FET, MOSFET - RF, Ny thyristors - DIAC, SIDACs, Transistorio - Bipolar (BJT) - Arrays, Modules maotera mpamily and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies SPB10N10 G electronic components. SPB10N10 G can be shipped within 24 hours after order. If you have any demands for SPB10N10 G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB10N10 G Toetran'ny vokatra
Ampahany :
SPB10N10 G
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 10.3A D2PAK
Series :
SIPMOS®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
10.3A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
170 mOhm @ 7.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs :
19.4nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
426pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
50W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO263-3-2
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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