Microsemi Corporation - APTGT50H60T3G

KEY Part #: K6532650

APTGT50H60T3G Vidiny (USD) [1633pcs Stock]

  • 1 pcs$27.83043
  • 10 pcs$26.19128
  • 25 pcs$24.55453
  • 100 pcs$23.40865

Ampahany:
APTGT50H60T3G
Manufacturer:
Microsemi Corporation
Famaritana antsipirihany:
POWER MOD IGBT3 FULL BRIDGE SP3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Modules maotera mpamily, Ny kristianao - SCR, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - JFET and Diode - Mpitaovana - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Microsemi Corporation APTGT50H60T3G electronic components. APTGT50H60T3G can be shipped within 24 hours after order. If you have any demands for APTGT50H60T3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGT50H60T3G Toetran'ny vokatra

Ampahany : APTGT50H60T3G
Manufacturer : Microsemi Corporation
Description : POWER MOD IGBT3 FULL BRIDGE SP3
Series : -
Ampahany : Active
IGBT Type : Trench Field Stop
Configuration : Full Bridge Inverter
Volonta - Famoronan'ny mpanangom-bokatra : 600V
Ankehitriny - Collector (Ic) (Max) : 80A
Hery - Max : 176W
Vce (eo) (Max) @ Vge, Ic : 1.9V @ 15V, 50A
Ankehitriny - Collector Cutoff (Max) : 250µA
Fampitahana Input (Cies) @ Vce : 3.15nF @ 25V
fahan'ny : Standard
NTC Thermistor : Yes
Ny mari-pana : -40°C ~ 175°C (TJ)
Type Type : Chassis Mount
Famonosana / tranga : SP3
Package Fitaovana mpamatsy : SP3

Mety ho liana koa ianao
  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.

  • A2C25S12M3-F

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.