Infineon Technologies - IPI80N08S406AKSA1

KEY Part #: K6418379

IPI80N08S406AKSA1 Vidiny (USD) [61102pcs Stock]

  • 1 pcs$0.63993
  • 500 pcs$0.58697

Ampahany:
IPI80N08S406AKSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH TO262-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Mpihazakazaka - Iray, Transistor - FET, MOSFET - Arrays, Transistors - IGBTs - tokan-tena, Ny thyristors - DIAC, SIDACs, Transistor - Tanjona manokana, Transistors - FET, MOSFET - RF, Transistorio - Bipolar (BJT) - Arrays and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI80N08S406AKSA1 Toetran'ny vokatra

Ampahany : IPI80N08S406AKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH TO262-3
Series : Automotive, AEC-Q101, OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 4800pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 150W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO262-3-1
Famonosana / tranga : TO-262-3 Long Leads, I²Pak, TO-262AA

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