SI4210DY-T1-GE3 Vidiny (USD) [3690pcs Stock]
- 2,500 pcs$0.11039
- Ampahany:
- SI4210DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2N-CH 30V 6.5A 8-SOIC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Diodes - Mpihazakazaka - Iray, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistor - FET, MOSFET - Arrays, Transistors - IGBTs - Modules and Ny kristianao - SCR ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI4210DY-T1-GE3 electronic components. SI4210DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4210DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4210DY-T1-GE3 Toetran'ny vokatra
Ampahany :
SI4210DY-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2N-CH 30V 6.5A 8-SOIC
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
6.5A
Rds On (Max) @ Id, Vgs :
35.5 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
445pF @ 15V
Hery - Max :
2.7W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
Package Fitaovana mpamatsy :
8-SO
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