Vishay Semiconductor Diodes Division - S1M-E3/61T

KEY Part #: K6458200

S1M-E3/61T Vidiny (USD) [1431523pcs Stock]

  • 1 pcs$0.02584
  • 1,800 pcs$0.02266
  • 3,600 pcs$0.02044
  • 5,400 pcs$0.01777
  • 12,600 pcs$0.01511
  • 45,000 pcs$0.01422
  • 90,000 pcs$0.01333

Ampahany:
S1M-E3/61T
Manufacturer:
Vishay Semiconductor Diodes Division
Famaritana antsipirihany:
DIODE GEN PURP 1KV 1A DO214AC. Rectifiers 1.0 Amp 1000 Volt
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Unjunction Programmable, Modules maotera mpamily, Transistors - JFET, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - Bipolar (BJT) - Single, Transistorio - Bipolar (BJT) - Arrays, Ny thyristors - DIAC, SIDACs and Transistor - Tanjona manokana ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Semiconductor Diodes Division S1M-E3/61T electronic components. S1M-E3/61T can be shipped within 24 hours after order. If you have any demands for S1M-E3/61T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1M-E3/61T Toetran'ny vokatra

Ampahany : S1M-E3/61T
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1KV 1A DO214AC
Series : -
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 1000V
Ankehitriny - salanisa antonony (Io) : 1A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 1.8µs
Ankehitriny - Reverse Leakage @ Vr : 5µA @ 1000V
Capacitance @ Vr, F : 12pF @ 4V, 1MHz
Type Type : Surface Mount
Famonosana / tranga : DO-214AC, SMA
Package Fitaovana mpamatsy : DO-214AC (SMA)
Ny mari-pana tsy miasa - Junction : -55°C ~ 150°C

Mety ho liana koa ianao
  • 1SS250(TE85L,F)

    Toshiba Semiconductor and Storage

    DIODE GEN PURP 200V 100MA SC59. Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High

  • SE30AFG-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.4A DO221AC. Rectifiers 3.0A, 400V, ESD PROTECTION, SLIM SMA

  • SE30AFD-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 1.4A DO221AC. Rectifiers 3.0A, 200V, ESD PROTECTION, SLIM SMA

  • SE30AFB-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 1.4A DO221AC. Rectifiers 3 Amp 100 volts ESD PROTECTION 13in

  • SE20AFJ-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 1.3A DO221AC. Rectifiers 2 Amp 600 volts ESD PROTECTION 13in

  • SE20AFGHM3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.3A DO221AC. Rectifiers 2 Amp 400 volts ESD PROTECTION 13in