SISH110DN-T1-GE3 Vidiny (USD) [126722pcs Stock]
- 1 pcs$0.29188
- Ampahany:
- SISH110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 20V PPAK 1212-8SH.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Transistor - Tanjona manokana, Diode - Mpitaovana - Arrays, Ny thyristors - DIAC, SIDACs and Transistors - JFET ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SISH110DN-T1-GE3 electronic components. SISH110DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH110DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH110DN-T1-GE3 Toetran'ny vokatra
Ampahany :
SISH110DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 20V PPAK 1212-8SH
Series :
TrenchFET® Gen II
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
13.5A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.3 mOhm @ 21.1A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 4.5V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
1.5W (Ta)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® 1212-8SH
Famonosana / tranga :
PowerPAK® 1212-8SH
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