Toshiba Semiconductor and Storage - RN2311(TE85L,F)

KEY Part #: K6526896

[4561pcs Stock]


    Ampahany:
    RN2311(TE85L,F)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Famaritana antsipirihany:
    TRANS PREBIAS PNP 0.1W USM.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - JFET, Transistors - IGBTs - tokan-tena, Transistors - FETs, MOSFETs - Single and Diode - Mpitaovana - Arrays ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Toshiba Semiconductor and Storage RN2311(TE85L,F) electronic components. RN2311(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2311(TE85L,F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN2311(TE85L,F) Toetran'ny vokatra

    Ampahany : RN2311(TE85L,F)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : TRANS PREBIAS PNP 0.1W USM
    Series : -
    Ampahany : Active
    Type Transistor : PNP - Pre-Biased
    Ankehitriny - Collector (Ic) (Max) : 100mA
    Volonta - Famoronan'ny mpanangom-bokatra : 50V
    Resistor - Base (R1) : 10 kOhms
    Resistor - Emitter Base (R2) : -
    DC ankehitriny Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
    Ankehitriny - Collector Cutoff (Max) : 100nA (ICBO)
    Frequency - Tetezamita : 200MHz
    Hery - Max : 100mW
    Type Type : Surface Mount
    Famonosana / tranga : SC-70, SOT-323
    Package Fitaovana mpamatsy : USM

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