Infineon Technologies - IPA80R1K2P7XKSA1

KEY Part #: K6398728

IPA80R1K2P7XKSA1 Vidiny (USD) [60727pcs Stock]

  • 1 pcs$0.69405
  • 10 pcs$0.61335
  • 100 pcs$0.48487
  • 500 pcs$0.37601
  • 1,000 pcs$0.28080

Ampahany:
IPA80R1K2P7XKSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 800V 4.5A TO220.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - tokan-tena, Transistors - FETs, MOSFETs - Single, Transistorio - Bipolar (BJT) - Arrays, Transistor - Tanjona manokana, Diodes - Mpihazakazaka - Iray, Diode - Mpitaovana - Arrays, Modules maotera mpamily and Diodes - Miova endrika ny habeny (varicaps, varact ...
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We specialize in Infineon Technologies IPA80R1K2P7XKSA1 electronic components. IPA80R1K2P7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPA80R1K2P7XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA80R1K2P7XKSA1 Toetran'ny vokatra

Ampahany : IPA80R1K2P7XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 800V 4.5A TO220
Series : CoolMOS™ P7
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 4.5A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.2 Ohm @ 1.7A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 300pF @ 500V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 25W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO220 Full Pack
Famonosana / tranga : TO-220-3 Full Pack

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