HGT1S10N120BNS Vidiny (USD) [28534pcs Stock]
- 1 pcs$1.45155
- 800 pcs$1.44433
- Ampahany:
- HGT1S10N120BNS
- Manufacturer:
- ON Semiconductor
- Famaritana antsipirihany:
- IGBT 1200V 35A 298W TO263AB.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistors - FET, MOSFET - RF, Diodes - Zener - Iray, Transistors - Bipolar (BJT) - RF, Transistors - JFET, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - Bipolar (BJT) - Single and Transistors - IGBTs - Tafidina ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in ON Semiconductor HGT1S10N120BNS electronic components. HGT1S10N120BNS can be shipped within 24 hours after order. If you have any demands for HGT1S10N120BNS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGT1S10N120BNS Toetran'ny vokatra
Ampahany :
HGT1S10N120BNS
Manufacturer :
ON Semiconductor
Description :
IGBT 1200V 35A 298W TO263AB
Series :
-
Ampahany :
Not For New Designs
IGBT Type :
NPT
Volonta - Famoronan'ny mpanangom-bokatra :
1200V
Ankehitriny - Collector (Ic) (Max) :
35A
Ankehitriny - Collector Pulsed (Icm) :
80A
Vce (eo) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Hery - Max :
298W
Miova angovo :
320µJ (on), 800µJ (off)
Karazana fidirana :
Standard
Gate Charge :
100nC
Td (on / off) @ 25 ° C :
23ns/165ns
Toe-javatra fitsapana :
960V, 10A, 10 Ohm, 15V
Fotoana Famerenana amin'ny laoniny (trr) :
-
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Fitaovana mpamatsy :
TO-263AB
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