Vishay Semiconductor Diodes Division - BYG10J/TR

KEY Part #: K6425843

BYG10J/TR Vidiny (USD) [822672pcs Stock]

  • 1 pcs$0.04496
  • 7,200 pcs$0.04158

Ampahany:
BYG10J/TR
Manufacturer:
Vishay Semiconductor Diodes Division
Famaritana antsipirihany:
DIODE AVALANCHE 600V 1.5A.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistor - Tanjona manokana, Transistors - FET, MOSFET - RF, Transistor - Unjunction Programmable, Transistor - FET, MOSFET - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Transistors - Bipolar (BJT) - RF ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Semiconductor Diodes Division BYG10J/TR electronic components. BYG10J/TR can be shipped within 24 hours after order. If you have any demands for BYG10J/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10J/TR Toetran'ny vokatra

Ampahany : BYG10J/TR
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE AVALANCHE 600V 1.5A
Series : -
Ampahany : Active
Type diode : Avalanche
Torohevitra - Reverse DC (Vr) (Max) : 600V
Ankehitriny - salanisa antonony (Io) : 1.5A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.15V @ 1.5A
Speed : Standard Recovery >500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 4µs
Ankehitriny - Reverse Leakage @ Vr : 1µA @ 600V
Capacitance @ Vr, F : -
Type Type : Surface Mount
Famonosana / tranga : DO-214AC, SMA
Package Fitaovana mpamatsy : DO-214AC (SMA)
Ny mari-pana tsy miasa - Junction : -55°C ~ 150°C

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