Vishay Siliconix - SIHJ240N60E-T1-GE3

KEY Part #: K6418538

SIHJ240N60E-T1-GE3 Vidiny (USD) [68009pcs Stock]

  • 1 pcs$0.57493

Ampahany:
SIHJ240N60E-T1-GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N-CHAN 600V PPAK SO-8L.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Diode - Zener - Arrays, Diodes - Mpihazakazaka - Iray, Diodes - Zener - Iray, Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistorio - Bipolar (BJT) - Arrays and Ny kristianao - SCR ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SIHJ240N60E-T1-GE3 electronic components. SIHJ240N60E-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHJ240N60E-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHJ240N60E-T1-GE3 Toetran'ny vokatra

Ampahany : SIHJ240N60E-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CHAN 600V PPAK SO-8L
Series : E
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 12A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 240 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 783pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 89W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PowerPAK® SO-8
Famonosana / tranga : PowerPAK® SO-8