Infineon Technologies - IPC302N08N3X1SA1

KEY Part #: K6417489

IPC302N08N3X1SA1 Vidiny (USD) [32425pcs Stock]

  • 1 pcs$2.17265

Ampahany:
IPC302N08N3X1SA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 80V 1A SAWN ON FOIL.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - JFET, Diodes - Miova endrika ny habeny (varicaps, varact, Transistor - FET, MOSFET - Arrays, Diodes - Mpihazakazaka - Iray and Transistor - Tanjona manokana ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPC302N08N3X1SA1 Toetran'ny vokatra

Ampahany : IPC302N08N3X1SA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 80V 1A SAWN ON FOIL
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 1A (Tj)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Fampiasana masinina (Ciss) (Max) @ Vds : -
Fihetsika FET : -
Fandroahana herinaratra (Max) : -
Ny mari-pana : -
Type Type : Surface Mount
Package Fitaovana mpamatsy : Sawn on foil
Famonosana / tranga : Die