ON Semiconductor - HGTD1N120BNS9A

KEY Part #: K6423264

HGTD1N120BNS9A Vidiny (USD) [136878pcs Stock]

  • 1 pcs$0.27022
  • 2,500 pcs$0.26133
  • 5,000 pcs$0.24889

Ampahany:
HGTD1N120BNS9A
Manufacturer:
ON Semiconductor
Famaritana antsipirihany:
IGBT 1200V 5.3A 60W TO252AA.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Ny thyristors - DIAC, SIDACs, Diodes - Mpihazakazaka - Iray, Ny kristianao - SCR, Diodes - RF, Diode - Zener - Arrays, Diode - Mpitaovana - Arrays and Diodes - Miova endrika ny habeny (varicaps, varact ...
Ny tombony azo amin'ny fifaninanana:
We specialize in ON Semiconductor HGTD1N120BNS9A electronic components. HGTD1N120BNS9A can be shipped within 24 hours after order. If you have any demands for HGTD1N120BNS9A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HGTD1N120BNS9A Toetran'ny vokatra

Ampahany : HGTD1N120BNS9A
Manufacturer : ON Semiconductor
Description : IGBT 1200V 5.3A 60W TO252AA
Series : -
Ampahany : Active
IGBT Type : NPT
Volonta - Famoronan'ny mpanangom-bokatra : 1200V
Ankehitriny - Collector (Ic) (Max) : 5.3A
Ankehitriny - Collector Pulsed (Icm) : 6A
Vce (eo) (Max) @ Vge, Ic : 2.9V @ 15V, 1A
Hery - Max : 60W
Miova angovo : 70µJ (on), 90µJ (off)
Karazana fidirana : Standard
Gate Charge : 14nC
Td (on / off) @ 25 ° C : 15ns/67ns
Toe-javatra fitsapana : 960V, 1A, 82 Ohm, 15V
Fotoana Famerenana amin'ny laoniny (trr) : -
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : TO-252-3, DPak (2 Leads + Tab), SC-63
Package Fitaovana mpamatsy : TO-252AA