Ampahany :
SISS08DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 25 V POWERPAK 1212
Series :
TrenchFET® Gen IV
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
53.9A (Ta), 195.5A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.23 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
3670pF @ 12.5V
Fandroahana herinaratra (Max) :
5W (Ta), 65.7W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® 1212-8S
Famonosana / tranga :
PowerPAK® 1212-8S