SISS08DN-T1-GE3 Vidiny (USD) [172802pcs Stock]
- 1 pcs$0.21404
- Ampahany:
- SISS08DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CHAN 25 V POWERPAK 1212.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Modules maotera mpamily, Transistor - FET, MOSFET - Arrays, Transistor - Unjunction Programmable, Transistors - IGBTs - Modules, Ny kristianao - SCR, Transistor - Tanjona manokana and Transistors - Bipolar (BJT) - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SISS08DN-T1-GE3 electronic components. SISS08DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS08DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS08DN-T1-GE3 Toetran'ny vokatra
Ampahany :
SISS08DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 25 V POWERPAK 1212
Series :
TrenchFET® Gen IV
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
53.9A (Ta), 195.5A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.23 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Vgs (Max) :
+20V, -16V
Fampiasana masinina (Ciss) (Max) @ Vds :
3670pF @ 12.5V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
5W (Ta), 65.7W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® 1212-8S
Famonosana / tranga :
PowerPAK® 1212-8S
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