ON Semiconductor - FDN357N

KEY Part #: K6396109

FDN357N Vidiny (USD) [615595pcs Stock]

  • 1 pcs$0.06038
  • 3,000 pcs$0.06008

Ampahany:
FDN357N
Manufacturer:
ON Semiconductor
Famaritana antsipirihany:
MOSFET N-CH 30V 1.9A SSOT3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diodes - Rectifiers Bridge, Diode - Mpitaovana - Arrays, Ny thyristors - DIAC, SIDACs, Transistors - JFET, Transistors - FETs, MOSFETs - Single, Transistor - Unjunction Programmable and Transistors - IGBTs - Tafidina ...
Ny tombony azo amin'ny fifaninanana:
We specialize in ON Semiconductor FDN357N electronic components. FDN357N can be shipped within 24 hours after order. If you have any demands for FDN357N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDN357N Toetran'ny vokatra

Ampahany : FDN357N
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 30V 1.9A SSOT3
Series : -
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 1.9A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.9nC @ 5V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 235pF @ 10V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 500mW (Ta)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : SuperSOT-3
Famonosana / tranga : TO-236-3, SC-59, SOT-23-3