Ampahany :
IPN60R3K4CEATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET NCH 600V 2.6A SOT223
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
2.6A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs :
4.6nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
93pF @ 100V
Fihetsika FET :
Super Junction
Fandroahana herinaratra (Max) :
5W (Tc)
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-SOT223
Famonosana / tranga :
SOT-223-3