IPG20N04S4L11ATMA1 Vidiny (USD) [202548pcs Stock]
- 1 pcs$0.18261
- 5,000 pcs$0.16757
- Ampahany:
- IPG20N04S4L11ATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET 2N-CH 8TDSON.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Ny thyristors - DIAC, SIDACs, Transistors - IGBTs - tokan-tena, Tratrao - TRIACs, Transistor - Unjunction Programmable, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Iray and Transistor - Tanjona manokana ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPG20N04S4L11ATMA1 electronic components. IPG20N04S4L11ATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N04S4L11ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N04S4L11ATMA1 Toetran'ny vokatra
Ampahany :
IPG20N04S4L11ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 8TDSON
Series :
Automotive, AEC-Q101, OptiMOS™
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20A
Rds On (Max) @ Id, Vgs :
11.6 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1990pF @ 25V
Hery - Max :
41W
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-PowerVDFN
Package Fitaovana mpamatsy :
PG-TDSON-8-4
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