Toshiba Semiconductor and Storage - TK10V60W,LVQ

KEY Part #: K6418370

TK10V60W,LVQ Vidiny (USD) [60727pcs Stock]

  • 1 pcs$0.67621
  • 2,500 pcs$0.67285

Ampahany:
TK10V60W,LVQ
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N-CH 600V 9.7A 5DFN.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Transistor - Unjunction Programmable, Transistor - FET, MOSFET - Arrays, Transistors - Bipolar (BJT) - Single, Diode - Zener - Arrays, Transistors - IGBTs - tokan-tena, Transistorio - Bipolar (BJT) - Arrays and Ny kristianao - SCR ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK10V60W,LVQ Toetran'ny vokatra

Ampahany : TK10V60W,LVQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 600V 9.7A 5DFN
Series : DTMOSIV
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 9.7A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 380 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 700pF @ 300V
Fihetsika FET : Super Junction
Fandroahana herinaratra (Max) : 88.3W (Tc)
Ny mari-pana : 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : 4-DFN-EP (8x8)
Famonosana / tranga : 4-VSFN Exposed Pad

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